US Patent Issued to SK hynix on June 30 for "Semiconductor device having NMOS transistors and channels of PMOS transistors formed of silicon/silicon germanium/silicon wherein silicon germanium not in contact with silicon oxide" (South Korean Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,338, issued on June 30, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device having NMOS transistors and channels of PMOS transistors formed of silicon/silicon germanium/silicon wherein silicon germanium not in contact with silicon oxide" was invented by Young Gwang Yoon (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an NMOS transistor structure formed over an NMOS area of a substrate; and a PMOS transistor structure formed over a PMOS area of the substrate. The NMOS transistor structure includes NMOS source/drain regions, and NMOS channel patterns and NMOS gate str...