US Patent Issued to SK hynix on June 2 for "Memory device generating voltage responsive to temperature and method of operating the same" (South Korean Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,540, issued on June 2, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device generating voltage responsive to temperature and method of operating the same" was invented by Min Hye Kang (Icheon-si, South Korea) and Chang Won Yang (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array including a plurality of memory cells, a temperature sensor configured to measure an internal temperature and generate a temperature compensation code corresponding to the internal temperature, a voltage control circuit configured to generate a conversion temperature code converted from the temp...