US Patent Issued to SK hynix on July 7 for "Semiconductor memory device with reduced stepped area" (South Korean Inventor)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,416, issued on July 7, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device with reduced stepped area" was invented by Dae Sung Eom (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a gate stack structure including a plurality of conductive layers stacked to be spaced apart from each other in a first direction, the gate stack structure surrounding the periphery of a polygonal opening. The semiconductor memory device also includes a stepped structure formed along a sidewall of the polygonal opening."

The patent was filed on Dec. 14, 2022, under Application No....