US Patent Issued to SK hynix on July 14 for "Page buffer circuit and peripheral circuit of a memory device" (South Korean Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,681,664, issued on July 14, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Page buffer circuit and peripheral circuit of a memory device" was invented by Hyung Jin Choi (Icheon-si, South Korea) and Chan Hui Jeong (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A page buffer circuit of a memory device includes a sensing circuit configured to sense a voltage level of a sensing node changed according to a state of a bit line during a sensing operation. The page buffer circuit also includes a clamping circuit connected to the sensing node, wherein the claiming circuit is configured to control the voltage level of the sensing...