US Patent Issued to SK hynix on Jan. 27 for "Semiconductor device with dual slit structures and offset contact plug for enhanced vertical connectivity" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,783, issued on Jan. 27, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor device with dual slit structures and offset contact plug for enhanced vertical connectivity" was invented by Sang Yong Lee (Icheon-si, South Korea), Sae Jun Kwon (Icheon-si, South Korea), Sang Min Kim (Icheon-si, South Korea), Jin Taek Park (Icheon-si, South Korea) and Sang Hyun Oh (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a line; a source structure on the line; a stack structure on the source structure; a first slit structure penetrating the stack structure; a second slit structure penetrating t...