ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,537,062, issued on Jan. 27, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Memory device and method of operating the same" was invented by Dong Uk Lee (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, and a method of operating the memory device, includes a memory block including a cell plug extending between a first line and a second line, wherein a first select line, a first word line group, a first pass word line, a second word line group, and a second select line are arranged along the cell plug between the first line and the second line. The memory device also includes a peripheral circuit configured t...