US Patent Issued to SK hynix on Jan. 20 for "Semiconductor device including a three-dimensional memory cell and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,453, issued on Jan. 20, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device including a three-dimensional memory cell and method for fabricating the same" was invented by Myoung Jin Kang (Gyeonggi-do, South Korea) and Seung Hwan Kim (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a word line stack disposed over a lower structure and including a plurality of word lines stacked in a direction vertical to a surface of the lower structure; and pillar-shaped slits penetrating edge parts of the word lines and including an etch stopper."

The patent was filed on Sept. 30,...