US Patent Issued to SK hynix on Jan. 20 for "Resistive memory device programmed using bi-directional driving currents" (South Korean Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,481, issued on Jan. 20, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Resistive memory device programmed using bi-directional driving currents" was invented by Sung Kil Seo (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive memory device may include a first and second signal lines, a memory layer, a first and second drivers, and a first contact structure. The first signal line may include a first contact node. The first and second signal lines may intersect. The second signal line may include a second contact node. The memory layer may be at an intersecting portion between the first and second signal lines ...