US Patent Issued to SK hynix on Jan. 20 for "Memory device performing link ECC operation and operating method thereof" (South Korean Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,530,258, issued on Jan. 20, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Memory device performing link ECC operation and operating method thereof" was invented by Hyun Seung Kim (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a syndrome calculator configured to generate an error location signal based on first data and an error correction code; an error corrector configured to generate second data by correcting an error in the first data according to the error location signal; and a data mask (DM) calculation circuit configured to generate a DM signal according to logic high bits of the firs...