US Patent Issued to SK hynix on Jan. 13 for "Memory device and manufacturing method of the memory device" (South Korean Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,997, issued on Jan. 13, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Memory device and manufacturing method of the memory device" was invented by Jin Ha Kim (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, and a manufacturing method of the memory device, includes a stack structure including alternately stacked first and second material layers. The memory device also includes a vertical hole extending through the stack structure in a vertical direction, isolation patterns protruding from side surfaces of the first material layers formed inside the vertical hole, and a blocking layer formed along su...