US Patent Issued to SK hynix on Feb. 24 for "Three-dimensional semiconductor device and method of manufacturing the same" (South Korean Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,732, issued on Feb. 24, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Three-dimensional semiconductor device and method of manufacturing the same" was invented by Jung Ryul Ahn (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional (3D) semiconductor device may include a stack structure and a vertical channel structure. The stack structure may include a first insulation pattern, a conductive pattern and a second insulation pattern. The conductive pattern may be arranged on the first insulation pattern. The second insulation pattern may be configured to physically contact an upper surface of the conducti...