ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,976, issued on Feb. 24, was assigned to SK HYNIX INC. (Icheon-si, South Korea).
"Semiconductor device and method for fabricating the same" was invented by Gwang Hyuk Shin (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include: first conductive lines; second conductive lines disposed on the first conductive lines to be spaced apart from the first conductive lines; selector layer disposed between the first conductive lines and the second conductive lines; a variable resistance layer disposed between the first conductive lines and the second conductive lines; and a first electrode layer including graph...