US Patent Issued to SK hynix on Feb. 17 for "Semiconductor memory device and method of manufacturing semiconductor memory device" (South Korean Inventor)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,284, issued on Feb. 17, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device and method of manufacturing semiconductor memory device" was invented by Kang Sik Choi (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a channel layer including a plurality of channel pillars that pass through a gate stack and a channel connection portion that extends from each of the plurality of channel pillars to overlap with the gate stack, a memory layer including a vertical...