US Patent Issued to SK hynix on Feb. 17 for "Semiconductor device and manufacturing method of semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,287, issued on Feb. 17, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor device and manufacturing method of semiconductor device" was invented by Dong Uk Lee (Icheon-si, South Korea) and Hae Chang Yang (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a source line, a bit line, and a gate structure located between the source line and the bit line. The gate structure may include conductive layers and insulating layers that are alternately stacked. The semiconductor device may include a topological insulator that may extend from the bit line to the source line through the ga...