ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,548,623, issued on Feb. 10, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Memory device and operating method thereof" was invented by Hyung Jin Choi (Icheon-si, South Korea), Se Chun Park (Icheon-si, South Korea) and Chan Hui Jeong (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device may include memory cells connected to a selected word line, and a peripheral circuit configured to store information regarding a foggy program pass loop in which a target program state is determined as foggy program pass during a foggy program operation on the selected word line, calculate a fine program pass loop based on the fo...