US Patent Issued to SK hynix on Feb. 10 for "Memory device and manufacturing method of the memory device" (South Korean Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,548,602, issued on Feb. 10, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and manufacturing method of the memory device" was invented by Nam Jae Lee (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, and a method of manufacturing the memory device, includes a lower structure including a first pad exposed through a top surface of the lower structure. The memory device also includes an upper structure including a second pad exposed through a bottom surface of the upper structure. The first and second pads are bonded to each other, and an interface at which the first and second pads are bonded t...