US Patent Issued to SK hynix on Dec. 23 for "Semiconductor device including three-dimensional memory cells" (South Korean Inventor)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,072, issued on Dec. 23, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device including three-dimensional memory cells" was invented by Seung Hwan Kim (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a conductive line stack including a plurality of double conductive lines stacked over a substrate in a direction perpendicular to a surface of the substrate; conductive line pads laterally oriented between edge portions of each of the double conductive lines; and a contact plug contacting the edge portions of the double conductive lines."

The patent was filed on June 16,...