US Patent Issued to SK hynix on Dec. 2 for "Semiconductor memory device and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,426, issued on Dec. 2, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device and manufacturing method thereof" was invented by Seung Wook Ryu (Yongin-si, South Korea) and Ki Hong Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a first source layer, a second source layer on the first source layer, a stack structure over the second source layer, and a common source line penetrating the stack structure. The second source layer includes a protective layer in contact with the common source line and a conductive layer surrounding the protective layer."

The pate...