ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,495, issued on Dec. 2, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Semiconductor device and method for manufacturing the same" was invented by Dong Soo Kim (Gyeonggi-do, South Korea) and Jung Ho Seo (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a semiconductor device with improved reliability and a method for manufacturing the same. A semiconductor device according to the present invention may comprise: a substrate including a gate trench; a gate insulating layer formed on a surface of the gate trench; and silicon-doped metal nitride on the gate insulating layer, wherein the s...