US Patent Issued to SK hynix on Dec. 2 for "Memory device and operating method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,487,753, issued on Dec. 2, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and operating method thereof" was invented by Gil Bok Choi (Icheon-si, South Korea) and Dae Hwan Yun (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device performs a detrap operation on a selected memory block when the number of program/erase cycles of the selected memory block equals or exceeds a predetermined set number. A circuit included in the memory device applies a heating current to a heating layer, thermally coupled to the channel of each of the plurality of strings included in the selected memory block in the detrap...