US Patent Issued to SK hynix on Dec. 2 for "Fail classification device for plurality of memory cells and method thereof" (South Korean Inventor)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,855, issued on Dec. 2, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Fail classification device for plurality of memory cells and method thereof" was invented by Seon O Lee (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fail classification device determines a cell type of a plurality of memory cells on the basis of threshold voltage distribution information or determines that the threshold voltage distribution information is abnormal. The fail classification device transforms the threshold voltage distribution information into a two-dimensional image, inputs the two-dimensional image to a target artificial intelli...