US Patent Issued to SK HYNIX on Dec. 16 for "Read threshold prediction in memory devices using deep neural networks" (California Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,499,348, issued on Dec. 16, was assigned to SK HYNIX INC. (Icheon-si, South Korea).

"Read threshold prediction in memory devices using deep neural networks" was invented by Haobo Wang (San Jose, Calif.), Aman Bhatia (San Jose, Calif.) and Fan Zhang (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Devices, systems and methods for improving performance of a memory device are described. An example method includes obtaining a plurality of samples corresponding to a probability distribution for each of a plurality of cell voltage distributions of the memory device, each of the plurality of cell voltage distributions corresponding to a read vol...