US Patent Issued to SK hynix on Aug. 26 for "Semiconductor device with improved cell density and manufacturing method of the semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,310, issued on Aug. 26, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor device with improved cell density and manufacturing method of the semiconductor device" was invented by Mi Seong Park (Icheon-si, South Korea), Jang Won Kim (Icheon-si, South Korea), In Su Park (Icheon-si, South Korea), Jung Shik Jang (Icheon-si, South Korea), Won Geun Choi (Icheon-si, South Korea) and Jung Dal Choi (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate structure including conductive layers and insulating layers alternately stacked with each other, channel structures passing through th...