US Patent Issued to SK HYNIX on Aug. 26 for "Semiconductor device including a through silicon via structure and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,938, issued on Aug. 26, was assigned to SK HYNIX INC. (Icheon-si, South Korea).

"Semiconductor device including a through silicon via structure and method of fabricating the same" was invented by Jung Yong Chae (Icheon-si, South Korea) and Jin Hee Cho (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a via hole, a first electrode, a second electrode and a first protecting insulation layer. The via hole may be formed to penetrate a substrate. The first electrode may include an electrode segment formed on a surface of the via hole. The second electrode may be formed on the first electrode along t...