ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,765, issued on Aug. 25, was assigned to SK HYNIX INC. (Icheon-si, South Korea).

"Semiconductor device having improved operating characteristics of a memory device" was invented by Soo Man Seo (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a plurality of first line structures extending in a first direction, each of the plurality of first line structures including a first pinned layer exhibiting a magnetization in a fixed magnetization direction; a plurality of second line structures spaced apart from the first line structures and extending in a second direction intersecting the first direction; ...