US Patent Issued to SK hynix on Aug. 25 for "Power gating control circuit, and semiconductor apparatus and semiconductor system using the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,855, issued on Aug. 25, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Power gating control circuit, and semiconductor apparatus and semiconductor system using the same" was invented by Mino Kim (Icheon-si, South Korea) and Sungwoo Lee (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor apparatus includes a power gating control circuit and a power gating circuit. The power gating control circuit generates a power gating signal based on an idle signal, a clock synchronization signal, and a delayed idle signal. The power gating circuit applies at least a first operating voltage to an internal circuit based ...