US Patent Issued to SK hynix on April 21 for "Memory devices and stack memory devices generating data strobing signal for data output" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,147, issued on April 21, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory devices and stack memory devices generating data strobing signal for data output" was invented by Chang Kwon Lee (Icheon-si, South Korea) and Jong Chan Yoon (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a base chip configured to generate a first read flag, a second read flag, and a plurality of alignment data strobing signals, responsive to a clock signal and a control signal, and a memory chip configured to output data stored in a first pseudo channel included in a memory core as pipe data, responsive to the fi...