ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,456, issued on April 14, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Semiconductor device and method for fabricating the same" was invented by Wan Sup Shin (Gyeonggi-do, South Korea), Seung Wook Ryu (Gyeonggi-do, South Korea) and Seung Mi Yeo (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a substrate; a body recess in the substrate; a body dielectric layer over the body recess; an active layer extending in a direction parallel to the substrate over the substrate; a contact node over an end portion of the active layer and perpendicular to the substrate; and a conductive line c...