US Patent Issued to SK hynix on April 14 for "Memory device and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,718, issued on April 14, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and method of manufacturing the same" was invented by Dae Hyun Kim (Icheon-si, South Korea) and Sei Yon Kim (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided herein may be a memory device and a method of manufacturing the same. The memory device may include a plurality of insulating layers and a plurality of gate lines configured to be alternately stacked, and a cell plug configured to pass through the plurality of insulating layers and the plurality of gate lines, wherein the plurality of gate lines, each made of a conducti...