ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,470, issued on April 14, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Memory device and method of manufacturing the same" was invented by Won Geun Choi (Icheon-si, South Korea), Mi Seong Park (Icheon-si, South Korea) and Jung Shik Jang (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, and a method of manufacturing the same, includes a stack structure and main plugs passing through the stack structure, the main plugs being spaced apart from each other in a first direction. The memory device also includes a separation pattern separating the main plugs in a second direction and a slit pattern separatin...