US Patent Issued to SK hynix, University-Industry Cooperation Group of Kyung Hee University on May 19 for "Method of forming thin film, method of forming thin film structure, method of manufacturing capacitor, capacitor and memory device including the same" (South Korean Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,125, issued on May 19, was assigned to SK hynix Inc. (Icheon, South Korea) and University-Industry Cooperation Group of Kyung Hee University (Yongin, South Korea).

"Method of forming thin film, method of forming thin film structure, method of manufacturing capacitor, capacitor and memory device including the same" was invented by Min Yung Lee (Icheon, South Korea), Woojin Jeon (Hwaseong, South Korea) and Yewon Kim (Hanam, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a thin film structure may include providing a TiN member, forming a MoO2 thin film on the TiN member by using a first ALD (atomic layer deposition) proc...