US Patent Issued to Sivananthan Laboratories on Jan. 20 for "Metasurface-coupled single photon avalanche diode for high temperature operation" (Illinois, California Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,552, issued on Jan. 20, was assigned to Sivananthan Laboratories Inc. (Bolingbrook, Ill.).

"Metasurface-coupled single photon avalanche diode for high temperature operation" was invented by Paul Boieriu (Lake Zurich, Ill.), Srinivasan Krishnamurthy (Cupertino, Calif.) and Christoph H Grein (Wheaton, Ill.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A photon avalanche diode, includes a quartz substrate, a doped HgCdTe contact layer on the substrate, an absorbing HgCdTe layer on the contact layer, a larger bandgap HgCdTe layer on the absorbing layer, a doped HgCdTe layer for a top contact layer on the larger bandgap HgCdTe layer, and a non-absorbing...