ALEXANDRIA, Va., May 12 -- United States Patent no. 12,623,900, issued on May 12, was assigned to SiTime Corp. (Sunnyvale, Calif.).
"MEMS with over-voltage protection" was invented by Nicholas Miller (Sunnyvale, Calif.), Ginel C. Hill (Sunnyvale, Calif.), Charles I. Grosjean (Los Gatos, Calif.), Michael Julian Daneman (Campbell, Calif.), Paul M. Hagelin (Saratoga, Calif.) and Aaron Partridge (Cupertino, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes first and second exposed electrical contacts and a cavity having a microelectromechanical system (MEMS) structure therein. A conductive path extends from the first exposed electrical contact to the cavity and an over-voltage...