US Patent Issued to SILTRONIC on Jan. 20 for "Method for depositing an epitaxial layer on a substrate wafer" (German Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,700, issued on Jan. 20, was assigned to SILTRONIC AG (Munich).

"Method for depositing an epitaxial layer on a substrate wafer" was invented by Thomas Stettner (Waging am See, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A characteristic thickness value of an edge of a wafer is determined, including at a notch position. The wafer is placed in a placement area, surrounded by a boundary, of susceptor for depositing an epitaxial layer. The characteristic thickness value at the notch position is checked to see if it differs by more than a percentage limit from the characteristic thickness value at an edge position having the greatest characteri...