US Patent Issued to SILTRONIC on Feb. 10 for "Method for testing the stress robustness of a semiconductor substrate" (German Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,680, issued on Feb. 10, was assigned to SILTRONIC AG (Munich).

"Method for testing the stress robustness of a semiconductor substrate" was invented by Ludwig Koester (Burghausen, Germany), Alexander Vollkopf (Burghausen, Germany) and Mitsunori Komoda (Burghausen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method tests the stress robustness of a semiconductor substrate. The method includes: forming a nitride layer on a surface of the semiconductor substrate, the nitride layer being directly deposited on the surface of the semiconductor substrate or on a native oxide layer that is interposed on the surface; cooling the semiconductor subs...