US Patent Issued to SILTRONIC on Dec. 23 for "Method of producing epitaxial layer wafers in a chamber of a deposition reactor" (German Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,503,791, issued on Dec. 23, was assigned to SILTRONIC AG (Munich).

"Method of producing epitaxial layer wafers in a chamber of a deposition reactor" was invented by Hannes Hecht (Burghausen, Germany), Michael Lauer (Burghausen, Germany), Korbinian Lichtenegger (Munich) and Walter Edmaier (Wittibreut, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method produces semiconductor wafers in a chamber of a deposition reactor of a plant. The method includes: repeatedly depositing an epitaxial layer on a substrate wafer in the chamber, producing semiconductor wafers, and at the same time: conditioning a replacement chamber outside the plant by purging...