ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,497,710, issued on Dec. 16, was assigned to Siltronic AG (Munich).
"Method for producing semiconductor wafers" was invented by Michael Gehmlich (Weissenborn, Germany), Gudrun Kissinger (Lebus, Germany), Karl Mangelberger (Ach, Austria), Timo Mueller (Burghausen, Germany) and Michael Skrobanek (Freiberg, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor single-crystal silicon, is produced from a silicon substrate wafer containing interstitial oxygen in a concentration of more than 5x1016 AT/cm3 (new ASTM) by an RTA treatment of the wafer in a first heat treatment at a first temperature in a temperature range of not less than 1200deg ...