US Patent Issued to Silicon Storage Technology on Feb. 17 for "Accelerated programming of four gate, split-gate flash memory cells" (California Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,554,423, issued on Feb. 17, was assigned to Silicon Storage Technology Inc. (San Jose, Calif.).

"Accelerated programming of four gate, split-gate flash memory cells" was invented by Viktor Markov (Santa Clara, Calif.), Jong-Won Yoo (Morgan Hill, Calif.) and Alexander Kotov (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of programming a memory device comprising control gate lines, erase gate lines, select gate lines, source lines and bit lines connected to rows and columns of memory cells, the method comprising performing an erase operation that includes applying a first voltage to one of the erase gate lines, performing a pre-...