US Patent Issued to Silicon Motion on April 21 for "Flash memory scheme capable of controlling flash memory device automatically generating debug information and transmitting debug information back to flash memory controller with making memory cell array generating errors" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,608,136, issued on April 21, was assigned to Silicon Motion Inc. (Hsinchu County, Taiwan).

"Flash memory scheme capable of controlling flash memory device automatically generating debug information and transmitting debug information back to flash memory controller with making memory cell array generating errors" was invented by Tsu-Han Lu (Hsinchu City, Taiwan) and Hsiao-Chang Yen (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A flash memory controller to be used in a storage device and coupled to a flash memory device of the storage device through a specific communication interface. The flash memory controller sends an error in...