US Patent Issued to Silicon-Magic Semiconductor Technology (Hangzhou) on July 14 for "Split-gate MOSFET and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,809, issued on July 14, was assigned to Silicon-Magic Semiconductor Technology (Hangzhou) Co. Ltd. (Hangzhou, China).

"Split-gate MOSFET and manufacturing method thereof" was invented by Jinyong Cai (Hangzhou City, China), Shida Dong (Hangzhou City, China) and Jiakun Wang (Hangzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a split-gate MOSFET and a manufacturing method, including: forming a first trench in a semiconductor layer; forming a second trench communicated with the first trench by using the first trench; forming a first dielectric layer in the second trench, a second dielectric layer in the first trench; formin...