US Patent Issued to SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY (HANGZHOU) on April 14 for "Trench MOSFET and manufacturing method therefor" (Chinese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,512, issued on April 14, was assigned to SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY (HANGZHOU) Co. LTD. (Hangzhou City, China).

"Trench MOSFET and manufacturing method therefor" was invented by Jinyong Cai (Hangzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a MOSFET includes: forming a first trench and a second trench; forming a first shield gate dielectric layer and a first shielding conductor at a lower part of the first trench and a second shield gate dielectric layer and a second shielding conductor at a lower part of the second trench; forming a first dielectric interlayer and a second dielectric interla...