US Patent Issued to Silergy Semiconductor Technology (Hangzhou) on Feb. 24 for "Semiconductor device and method for manufacturing the same" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,762, issued on Feb. 24, was assigned to Silergy Semiconductor Technology (Hangzhou) LTD (Hangzhou, China).

"Semiconductor device and method for manufacturing the same" was invented by Huan Wang (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device having a combination structure of a horizontal oxide layer structure and a vertical oxide layer structure, can include: etching from an upper surface of the semiconductor substrate to inside of the semiconductor substrate to form a trench; depositing oxides in the trench to form the vertical oxide layer structure; etching the vertical oxide layer s...