US Patent Issued to SICRYSTAL on July 21 for "Crystal structure orientation in semiconductor semi-finished products and semiconductor substrates for fissure reduction and method of setting same" (German Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,686,943, issued on July 21, was assigned to SICRYSTAL GMBH (Nuremberg, Germany).

"Crystal structure orientation in semiconductor semi-finished products and semiconductor substrates for fissure reduction and method of setting same" was invented by Michael Vogel (Nuremberg, Germany), Erwin Schmitt (Grossenseebach, Germany), Arnd-Dietrich Weber (Forchheim, Germany), Ralph-Uwe Barz (Erlangen, Germany) and Dominik Bannspach (Erlangen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "Crystal structure orientation in semiconductor semi-finished products and semiconductor substrates for fissure reduction and method of setting same The present invention pr...