US Patent Issued to SICRYSTAL on July 14 for "System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing same" (German Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,680,190, issued on July 14, was assigned to SICRYSTAL GMBH (Nuremberg, Germany).

"System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing same" was invented by Bernhard Ecker (Nuremberg, Germany), Ralf Muller (Nuremberg, Germany), Philipp Schuh (Nuremberg, Germany), Matthias Stockmeier (Nuremberg, Germany) and Michael Vogel (Nuremberg, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing a bulk semiconductor single crystals, such as silicon carbide, based on physical vapor tra...