US Patent Issued to SHINDENGEN ELECTRIC MANUFACTURING on Nov. 3 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,373, issued on Nov. 3, was assigned to SHINDENGEN ELECTRIC MANUFACTURING Co. LTD. (Tokyo).

"Semiconductor device" was invented by Azusa Sato (Saitama, Japan) and Yoshifumi Matsuzaki (Saitama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes, a semiconductor base body, an insulation layer that has an opening, and a surface electrode. The semiconductor base body includes a drift region, a p-type dopant region, and a peripheral dopant region. The p-type dopant region has a high concentration region that is formed in a region where the high concentration region overlaps with the p-type dopant region. A plurality of rec...