ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,017, issued on Jan. 13, was assigned to SHINDENGEN ELECTRIC MANUFACTURING Co. LTD. (Tokyo).
"Bidirectional thyristor" was invented by Yukihiro Shibata (Asaka, Japan), Tadashi Inoue (Asaka, Japan) and Yasutoshi Tsuboi (Asaka, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A bidirectional thyristor capable of improving (dv/dt)c capability includes first and second first-conductivity-type semiconductor layers; first and second second-conductivity-type semiconductor layers; a plurality of carrier emitting portions disposed on a third second-conductivity-type semiconductor layer; a fourth second-conductivity-type semiconductor layer; first and seco...