US Patent Issued to SHIN-ETSU HANDOTAI on Nov. 3 for "Method for manufacturing bonded semiconductor wafer" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,494, issued on Nov. 3, was assigned to SHIN-ETSU HANDOTAI Co. LTD. (Tokyo).

"Method for manufacturing bonded semiconductor wafer" was invented by Junya Ishizaki (Takasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a bonded semiconductor wafer, the method includes manufacturing an epitaxial wafer by epitaxially growing a sacrificial layer and an epitaxial layer having a semiconductor functional layer on a starting substrate, forming a device isolation groove by a selective etching method so as to expose the sacrificial layer, forming a passivation film on at least an exposed surface of the sacrificial layer, produ...