ALEXANDRIA, Va., June 16 -- United States Patent no. 12,655,537, issued on June 16, was assigned to SHIN-ETSU HANDOTAI Co. LTD. (Tokyo).
"Epitaxial wafer" was invented by Atsushi Suzuki (Nishigo-mura, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention is an epitaxial wafer, including an epitaxial film of a semiconductor material different from silicon being formed on a silicon substrate, in which the epitaxial film has a film thickness of less than 1 at a wafer outer-peripheral portion when a film thickness at a center of the wafer is defined as 1. Thereby, the epitaxial wafer having a heteroepitaxial film with few defects without dependence on a dopant concentration or a variety of a...