US Patent Issued to SHIN-ETSU HANDOTAI on Dec. 16 for "Epitaxial wafer cleaning method" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,077, issued on Dec. 16, was assigned to SHIN-ETSU HANDOTAI Co. LTD. (Tokyo).

"Epitaxial wafer cleaning method" was invented by Norimichi Tanaka (Annaka, Japan), Hisashi Masumura (Yabuki-machi, Japan), Teppei Nakata (Takasaki, Japan) and Yuhei Fukazu (Takasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An epitaxial wafer cleaning method for cleaning a wafer having an epitaxial film formed on a front surface thereof, including: a first cleaning step of supplying a cleaning solution containing O3 to all surfaces, including front, back, and end surfaces, of the wafer to perform spin cleaning; a second cleaning step of supplying a cleaning sol...