ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,688, issued on April 14, was assigned to SHIN-ETSU HANDOTAI Co. LTD. (Tokyo).
"Method for manufacturing SOI wafer" was invented by Hiroji Aga (Takasaki, Japan) and Isao Yokokawa (Takasaki, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing an SOI wafer including a step of performing an adjustment to a film thickness of an SOI layer of the SOI wafer by wet etching. In the step of performing the adjustment to the film thickness of the SOI layer, a first etching step of etching a surface of the SOI layer using an SC1 solution; and a second etching step of etching the surface of the SOI layer by bringing the SOI layer into ...